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On the Indium Precipitation in Silicon
Published online by Cambridge University Press: 21 February 2011
Abstract
Indium precipitation in Si after ion implantation and rapid thermal annealing was studied using plan-view and cross-sectional TEM and SIMS analysis. The precipitates were found to be single crystalline with the bulk In body-centered tetragonal lattice based on periodicity data in two dimensions. The orientation relationship between the precipitate and Si lattice has been derived to be:
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