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On the Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion

Published online by Cambridge University Press:  17 March 2011

Alain Claverie ,
Filadelfo Cristiano ,
Benjamin Colombeau  and
Nicholas Cowern
Alain Claverie
Affiliation:
CEMES - CNRS, BP 4347, 31055 Toulouse Cedex 4, France
Filadelfo Cristiano
Affiliation:
CEMES - CNRS, BP 4347, 31055 Toulouse Cedex 4, France
Benjamin Colombeau
Affiliation:
CEMES - CNRS, BP 4347, 31055 Toulouse Cedex 4, France
Nicholas Cowern
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

In this paper, we discuss the mechanisms by which small clusters evolve through “magic” sizes into {113} defects and then, at sufficiently high dose levels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si(int)s between different extended defects, leading to a decrease of their formation energy. The calculation of the supersaturation of free Si-interstitials in dynamical equilibrium with these defects shows a hierarchy of levels of nonequilibrium diffusion, ranging from supersaturations S of about 106 in the presence of small clusters, through 103 in the presence of {113} defects, to S in the range 100 down to 1 as loops are formed, evolve and finally evaporate. A detailed analysis of defect energetics has been carried out and it is shown that Ostwald ripening is the key concept for understanding and modelling defect interactions during TED of dopants in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B11.6
Copyright
Copyright © Materials Research Society 2000

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