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On the Contacts Formed in Ni-Al-Si System Due to Localized Melting by Means of Rapid Thermal Processing

Published online by Cambridge University Press:  26 February 2011

A. Katz  and
Y. Komem
A. Katz
Affiliation:
Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
Y. Komem
Affiliation:
Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
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Abstract

Localized rapid melting of an intermediate Al film in the Ni(30nm)/Al(10nm)/<100>n-Si system was successfully carried out by means of rapid thermal processing at temperatures higher than 580°C. This rapid melting resulted in the formation of a unique metal-silicon contact composed of three separated layers and has the following structure: Ni(Al0.5,Si0.5)/Al3 Ni/NiSi / <100>n-Si. It was found on the basis of quenching treatments after subsequent rapid thermal processings that an eutectic melting initiated at the Al-Si interface at 580°C, propagated towards the Ni layer and then formed a localized melt zone confined mainly to the region of the intermediate Al layer. The formation of the nickel silicides took place at the silicon surface after Ni diffusion through the melt zone, while the Al compounds were formed during a solidification process of the eutectic liquid. The eutectic melting at 580°C led to the decrease of the sheet resistance of the formed films from 3.2 to 2.6 / and to the increase of the Schottky barrier height of the contact from 0.6 to 0.76 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 719
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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