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Observations of the Solid Phase Epitaxial Regrowth for GaAs/Si

Published online by Cambridge University Press:  22 February 2011

Philip Kightley ,
Peter J Goodhew ,
Peter D Augustus  and
Robert R Bradley
Philip Kightley
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool, England L69 3BX.
Peter J Goodhew
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool, England L69 3BX.
Peter D Augustus
Affiliation:
GEC-Marconi Materials Technology Ltd., Towcester, Northants.
Robert R Bradley
Affiliation:
GEC-Marconi Materials Technology Ltd., Towcester, Northants.
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Abstract

The changes in defect structure caused by an anneal are studied by TEM for thin GaAs layers on Si. A low growth temperature of 450°C is always used for the first 300Å. When it is first deposited this layer contains considerable disorder which consists of planar defects, {112} epitaxy and an irregular distribution of dislocations. Annealing of the layer gives rise to a solid phase regrowth that consumes the misoriented and much of the twinned crystal and produces regular misfit dislocation arrays. Continued growth at high temperature can reduce the twin densities to below the detection limit of TEM. It is this solid phase transformation of this layer that allows good epitaxy to continue.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 443
Copyright
Copyright © Materials Research Society 1992

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References

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