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Observation of Dopant Profile of Transistors Using Scanning Nonlinear Dielectric Microscopy

Published online by Cambridge University Press:  31 January 2011

Koichiro Honda  and
Yasuo Cho
Koichiro Honda
Affiliation:
[email protected], Fusitsu Laboratories Ltd, Atsugi, Japan
Yasuo Cho
Affiliation:
[email protected], Tohoku University, Sendai, Japan
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Abstract

We have demonstrated that scanning nonlinear dielectric microscopy (SNDM) exhibited high performance and high resolution in observing the dopant concentration profile of transistors. In this study, good quantitative agreement between the SNDM signals and dopant density values obtained by SIMS in standard Si samples, which dopant concentrations have been calibrated. We succeeded in visualizing high-resolution dopant profiles in n- and p-type MOSFET with 40 nm gate channels. It is considered that SNDM would be an effective method in measuring the quantitative two-dimensional dopant profiles of transistors. Finally, we have succeeded in detecting the dopant profiles of SRAM memory cell transistors.

Keywords

dopantscanning probe microscopy (SPM)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B09-01
Copyright
Copyright © Materials Research Society 2010

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