Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-09T09:31:00.439Z Has data issue: false hasContentIssue false
  • English
  • Français

A Novel Optical Technique to Measure Pad-Wafer Contact Area in Chemical Mechanical Planarization

Published online by Cambridge University Press:  01 February 2011

Carolina L. Elmufdi  and
Gregory P. Muldowney
Carolina L. Elmufdi
Affiliation:
[email protected], Rohm and Haas Electronic Materials CMP Technologies, Pad Engineering Research Group, 451 Bellevue Rd., Newark, DE, 19713, United States, 302-366-0500, 302-456-6628
Gregory P. Muldowney
Affiliation:
[email protected], Rohm and Haas Electronic Materials CMP Technologies, Pad Engineering Research Group, Newark, DE, 19713, United States
Get access

Abstract

Real contact area between a CMP pad and wafer is a key factor in local contact pressure, friction and pad wear, all of which impact material removal and defect formation. A new optical method is introduced that quantifies the real contact area during polishing. Confocal reflectance interference contrast microscopy (C-RICM) uses a single focal plane to image the pad-wafer contact interface. A sapphire cover slip is used to provide optical transparency and to match the refractive index of the pad. Imaging the pad surface through the cover slip reveals areas of no reflection (pad-cover slip contact), areas of reflection (non-contact), and interference fringes (near contact). The C-RICM method was validated using micro-fabricated pads having uniform arrays of cylindrical surface structures of known contact area. Experiments conducted on porous polyurethane pads revealed that the real contact area is less than 10% of the total presented area. However Greenwood-Williamson (G-W) theory, widely used in CMP material removal models, predicts a contact area at least a factor of ten smaller. The discrepancy was found to result at least in part because the individual contact zones are not elliptical as assumed in G-W theory. In fact many contacting structures are crescents located at the perimeter of individual pores. These findings underscore the need for accurate control of pore density and morphology in polishing pads, in both initial manufacture and surface conditioning during CMP. The C-RICM method allows non-destructive benchmarking of polishing media in terms of pad-wafer contact, essential for developing improved pad architectures that achieve lower CMP defect levels.

Keywords

CMPopticaltribology
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F12-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Elmufdi, C. L., Paesano, A., Muldowney, G. P., and James, D. B., Proc. of CAMP 9th International Symposium on CMP (2004)Google Scholar
2 Jeng, Y. R., Huang, P. Y., and Pan, W. C., J. Electrochem. Soc., 150, G630 (2003)Google Scholar
3 Nguyen, V. H., Daamen, R., Kranenburg, H. van, Velden, P. van der, and Woerlee, P. H., J. Electrochem. Soc., 150 G689 (2003)Google Scholar
4 Seok, J., Sukam, C. P., Kim, A. T., Tichy, J. A., and Cale, T. S., Wear, 254, 307 (2003)Google Scholar
5 Greenwood, J. A. and Williamson, J. B. P., Proc. Roy. Soc. London A, 295, 300 (1966)Google Scholar
6 Kendall, K. and Tabor, D., Proc. Roy. Soc. London A, 323, 321 (1971)Google Scholar
7 Boeschoten, F. and Held, E. F. M. van der, Physica, 23, 37 (1967)Google Scholar
8 Kogut, L. and Komvopoulos, K., J. App. Phys., 94, 3153 (2003)Google Scholar
9 Muldowney, G. P., Elmufdi, C. L., Palaparthi, R., Tselepidakis, D. P., Natu, S. G., and Vikas, V., Proc. of CMP-MIC (2006)Google Scholar
10 Curtis, A. S. G., J. Cell Biol. 20, 199 (1964)Google Scholar
11 Boal, D., Mechanics of the Cell, 1st ed., Cambridge Univ. Press, Cambridge, UK (2002)Google Scholar
12 Wolos, G. J., M.S. Thesis, University of Delaware, (2003)Google Scholar