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Nonequilibrium Carrier Dynamics Studied in Er, O-Codoped GaAs by Pump-Probe Reflection Technique

Published online by Cambridge University Press:  01 February 2011

Yasufumi Fujiwara ,
Kazuhiko Nakamura ,
Shoichi Takemoto ,
Yoshikazu Terai ,
Masato Suzuki ,
Atsushi Koizumi ,
Yoshikazu Takeda  and
Masayoshi Tonouchi
Yasufumi Fujiwara
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Kazuhiko Nakamura
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Shoichi Takemoto
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Yoshikazu Terai
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Masato Suzuki
Affiliation:
Institute of Laser Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Atsushi Koizumi
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Yoshikazu Takeda
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Masayoshi Tonouchi
Affiliation:
Institute of Laser Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Abstract

Carrier dynamics in Er,O-codoped GaAs (GaAs:Er,O) have been systematically investigated by means of a pump and probe reflection technique with a mode-locked Ti:sapphire laser. In GaAs:Er,O, it has been found that the codoping produces a single atom configuration (Er-20 configuration) as an Er atom located at the Ga sublattice with two adjacent O atoms together with two As atoms, resulting in extremely strong Er luminescence. Time-resolved reflectivity of GaAs:Er,O exhibited an abrupt increase in amplitude, followed by a steep decrease to negative in less than 1 ps and then a gradual increase in approximately 100 ps. The steep decrease is due to bandgap renormalization. The gradual increase in reflectivity depended strongly on Er concentration, indicating that a trap induced by Er and O codoping plays an important role in dynamics of nonequilibrium carriers in GaAs:Er,O.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V3.7
Copyright
Copyright © Materials Research Society 2005

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References

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