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New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (Ir-Ras)
Published online by Cambridge University Press: 21 February 2011
Abstract
Simulation of a thin oxide RAS spectrum obtained by using the dielectric function extracted from thick oxide RAS spectra is shown to be a viable method for the comparison of oxide films of differing thickness. Bulk and near-interfacial features of thermally grown SiO2 thin films were studied by this method and it was found that the LO phonon peak at about 1255 cm−1 reflects bulk SiO2 structure and a higher reflectance between 1100 and 1200 cm−1 reflects SiO2/Si interface structure.
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- Copyright © Materials Research Society 1994