Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-20T02:34:18.481Z Has data issue: false hasContentIssue false
  • English
  • Français

Neutron Depth Profiles of Boron Implanted Semiconductors

Published online by Cambridge University Press:  21 February 2011

Robert C. Bowman Jr. ,
John F. Knudsen  and
R. Gregory Downing
Robert C. Bowman Jr.
Affiliation:
The Aerospace Corporation, Laboratory Operations, P.O. Box 92957, Los Angeles, CA 90009
John F. Knudsen
Affiliation:
The Aerospace Corporation, Laboratory Operations, P.O. Box 92957, Los Angeles, CA 90009
R. Gregory Downing
Affiliation:
National Institute for Standards and Technology, Center for Analytical Chemistry, Gaithersburg, MD 20899
Get access

Abstract

The nondestructive neutron depth profile (NDP) technique has been used to measure boron (10B) distributions in Si and Hg0.7Cd0.3 Te after multiple energy ion implants. The NDP results are compared with simulations generated by TRIM and SUPREM computer codes. The influence of SiO2 films on the boron profiles was examined and the effects of thermal anneals are also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 166: Symposium J – Neutron Scattering for Materials Science , 1989 , 331
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ryssel, H., Lang, G., Biersack, J.P., Muller, K., and Kruger, W., IEEE Trans. Electron Devices 27, 58 (1980).Google Scholar
2. Vandervorst, W., Shepherd, F.R., and Downing, R.G., J. Vac. Sci. Technol. A 3, 1318 (1985).Google Scholar
3. Bowman, R.C. Jr., Marks, J., Downing, R.G., Knudsen, J.F., and To, G.A., Mat. Res. Soc. Symp. Proc. 90, 279 (1987).Google Scholar
4. Fink, D., Biersack, J.P., Carstanjen, H.D., Jahnel, F., Muller, K., Ryssel, H., and Osei, A., Rad. Effects 77, 11 (1983).Google Scholar
5. Bowman, R. C. Jr., and Jamieson, D.N., Symp. Proc. SPIE 822, 31 (1987).Google Scholar
6. Biersack, J.P. and Haggmark, L.G., Nucl. Instrum. Methods 174, 257 (1980).Google Scholar
7. Ziegler, J.F., Biersack, J.P., and Littmark, A., The Stopping and Range of Ions in Solids, (Pergamon, New York, 1985)Google Scholar
8. Downing, R.G., Maki, J.T., and Fleming, R.F., in Microelectronic Processing: Inorganic Materials Characterization, edited by Casper, L.A. (Am. Chem. Soc., Washington, D.C., 1986) p. 163.Google Scholar
9. Deline, V.R., Johnson, N.M., and Christel, L.A., in Mat. Res. Symp. Proc. 25, 649 (1984).Google Scholar
10. Antoniadis, D. A., Hansen, S. E., and Dutton, R. W., “SUPREM II -- A Program for IC Process Modeling and Simulation”, SEL 78-020, Stanford Electronics Labs, Stanford University, June 1978.Google Scholar
11. Ryssel, H., Muller, K., Haberger, K., Henkelmann, R., and Jahnel, F., Appl. Phys. 22, 35 (1980).Google Scholar
12. Bowman, R. C. Jr., Knudsen, J. F., Downing, R. G., and Kremer, R. E., Mat. Res. Soc. Symp. Proc. 126, 89 (1989).Google Scholar