Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T18:50:22.790Z Has data issue: false hasContentIssue false
  • English
  • Français

Near-field Scanning Optical Microscopy and Electron Microprobe Microscopy Investigations of Immiscibility Effects in Indium Gallium Phosphide Grown by Liquid Phase Epitaxy

Published online by Cambridge University Press:  21 March 2011

C. A. Paulson ,
A. B. Ellis  and
T. F. Kuech
C. A. Paulson
Affiliation:
Department of Chemistry, The University of Wisconsin, Madison, WI 53706
A. B. Ellis
Affiliation:
Department of Chemistry, The University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, The University of Wisconsin, Madison, WI 53706
Get access

Abstract

We have used Near-field Scanning Optical Microscopy (NSOM) and Electron Probe Microanalysis (EPMA) to study the topographic and microscopic optical properties of indium gallium phosphide (In1−xGaxP) samples grown by Liquid Phase Epitaxy (LPE) on gallium arsenide substrates. Photoluminescence (PL) intensity images gathered using NSOM exhibit strong, highly localized variations in the optical properties of these samples that are seen to occur roughly in registry with the surface topography. Shifts in the PL peak position (by 27 meV) occur across highly mismatched samples with high In content, whereas no shifts were seen for In1−xGaxP films with a nearly lattice matched composition. Compositional fluctuations lead to these PL peak energy shifts, measured by NSOM with a resolution of 250 nm. These composition fluctuations arise from the known solid-solid miscibility gap in the In1−xGaxP system at temperatures used for the growth of these samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G2.7
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ueda, O., Takikawa, M., Komeno, J., Umebu, I., Jap. J. Appl. Phys. Lett. 26, L1824, (1987).Google Scholar
2. Yoon, S. F., Mah, K. W., Zheng, H. Q., J. Alloys and Compounds, 280, 299, (1998).Google Scholar
3. Bauser, E., “Atomic Mechanisms in Semiconductor Liquid Phase Epitaxy,” Handbook of Crystal Growth, Vol. 3, ed. Hurle, D. T. J. (Elsevier, 1994), pp.880–939.Google Scholar
4. Kim, T. W., Ko, H. J., Park, H. L., Solid State Comm., 110, 29, (1999).Google Scholar
5. Stringfellow, G. B., J. Appl. Phys. 43, 3455, (1972).Google Scholar
6. Marsh, J. H., Appl. Phys. Lett., 41, 732, (1982).Google Scholar
7. Kato, T., Matsumoto, T., Ishida, T., Jpn. J. Appl. Phys. Part 1, 28, 1513, (1989).Google Scholar
8. Henoc, P, Izrael, A., Quillec, M., Launois, H., Appl. Phys. Lett., 40. 963, (1982).Google Scholar
9. Kuech, T. F., McCaldin, J. O., J. Vac. Sci. Tech., 17, 891, (1980).Google Scholar
10. Mukai, S., J. Appl. Phys. 54, 2635, (1983).Google Scholar
11. Gilliland, G. D., Mater. Sci. Eng. Rep., R18, (1997).Google Scholar
12. Matthews, J. W., Blakeslee, A. E., Mader, S., Thin Solid Films, 33, 253, (1976).Google Scholar