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Nano-Optics of Bismuth Nanowires

Published online by Cambridge University Press:  11 February 2011

M. R. Black ,
P. L. Hagelstein  and
M. S. Dresselhaus
M. R. Black
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139–4307
P. L. Hagelstein
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139–4307
M. S. Dresselhaus
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139–4307 Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139–4307
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Abstract

The optical absorption from an indirect L-T point valence band transition in bismuth nanowires is simulated based on a surface sensitive term, which is very weak in bulk bismuth, but effectively couples the L and T point bands in bismuth nanowires. The experimental Fourier transform infrared absorption spectra in the energy range 0.08 to 0.5 eV are compared to theoretical simulations for absorption resulting from indirect interband transitions between subbands at the L point valence band to subbands at the T point valence band as the polarization, tellurium doping, and wire diameter are varied. The simulated absorption from this indirect transition reproduces many of the experimentally observed trends and allows us to conclude that the dominant feature in the experimental absorption spectra of Bi nanowires results from an indirect L-T point transition which is enhanced in Bi nanowires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F7.7
Copyright
Copyright © Materials Research Society 2003

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References

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