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Nanocharacterization of Texture and Hillock Formation in Thin Al And Al-0.2%Cu Films for Thin-Film Transistors
Published online by Cambridge University Press: 10 February 2011
Abstract
The relation between the nanostructure of pure Al and Al-0.2 wt.% Cu thin films on glass substrates and anti-stress migration properties were investigated. These films were deposited on liquid-crystal display (LCD) grade glass substrate (550 x 650 mm) by means of two types of dc magnetron multi-chamber sputtering apparatus.
We developed the nanoindentation techniques to accelerate the characterization time for stress migration test. By AFM and cross-sectional TEM observations, we found an unusual three-layer structure in a Al-Cu thin film with strong anti-stress migration property.
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- Copyright © Materials Research Society 1997
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