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MW plasma enhanced CVD of intrinsic Si for thin film solar cells

Published online by Cambridge University Press:  01 February 2011

Bas B. Van Aken
Affiliation:
[email protected], ECN - Solar Energy, thin film photovoltaics, P.O. box 1, Petten, 1755 ZG, Netherlands
Hans Leegwater
Affiliation:
[email protected], ECN - Solar Energy, P.O. box 1, Petten, 1755 ZG, Netherlands
Maarten Dorenkamper
Affiliation:
[email protected], ECN - Solar Energy, P.O. box 1, Petten, 1755 ZG, Netherlands
Camile Devilee
Affiliation:
[email protected], ECN - Solar Energy, P.O. box 1, Petten, 1755 ZG, Netherlands
Jochen Loffler
Affiliation:
[email protected], ECN - Solar Energy, P.O. box 1, Petten, 1755 ZG, Netherlands
Maurits C.R. Heijna
Affiliation:
[email protected], ECN - Solar Energy, P.O. box 1, Petten, 1755 ZG, Netherlands
Wim J. Soppe
Affiliation:
[email protected], ECN - Solar Energy, P.O. box 1, Petten, 1755 ZG, Netherlands
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Abstract

Our aim is the development of high-throughput production technology for high efficiency, amorphous and microcrystalline thin film silicon photovoltaics (PV) on flexible substrates. A roll-to-roll system is developed, with three deposition chambers for the continuous deposition of n-type, intrinsic and p-type Si. Novel MW sources for plasma enhanced chemical vapour deposition (PECVD) are introduced in the roll-to-roll coater as MW-PECVD combines good quality with large area, high rate deposition of intrinsic Si. A comparison is made between Raman and UV-reflection spectroscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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