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MRS 2001 (Boston): Design and Quantification of a Nanoscale Field Effect Transistor: Distributed Response Analysis for Investigating Conductive Behaviour.

Published online by Cambridge University Press:  15 March 2011

Marc in het Panhuis ,
Jonathan N. Coleman ,
Paul. A. Popelier ,
Brian Foley ,
Robert W. Munn  and
Werner J. Blau
Marc in het Panhuis
Affiliation:
Materials Ireland Polymer Research Centre, Department of Physics, Trinity College Dublin, Dublin 2, Ireland Department of Chemistry, UMIST, Manchester M60 1QD, United Kingdom Department of Electrical and Electronic Engineering, Trinity College Dublin, Dublin 2, Ireland
Jonathan N. Coleman
Affiliation:
Materials Ireland Polymer Research Centre, Department of Physics, Trinity College Dublin, Dublin 2, Ireland Department of Chemistry, UMIST, Manchester M60 1QD, United Kingdom Department of Electrical and Electronic Engineering, Trinity College Dublin, Dublin 2, Ireland
Paul. A. Popelier
Affiliation:
Materials Ireland Polymer Research Centre, Department of Physics, Trinity College Dublin, Dublin 2, Ireland Department of Chemistry, UMIST, Manchester M60 1QD, United Kingdom Department of Electrical and Electronic Engineering, Trinity College Dublin, Dublin 2, Ireland
Brian Foley
Affiliation:
Materials Ireland Polymer Research Centre, Department of Physics, Trinity College Dublin, Dublin 2, Ireland Department of Chemistry, UMIST, Manchester M60 1QD, United Kingdom Department of Electrical and Electronic Engineering, Trinity College Dublin, Dublin 2, Ireland
Robert W. Munn
Affiliation:
Materials Ireland Polymer Research Centre, Department of Physics, Trinity College Dublin, Dublin 2, Ireland Department of Chemistry, UMIST, Manchester M60 1QD, United Kingdom Department of Electrical and Electronic Engineering, Trinity College Dublin, Dublin 2, Ireland
Werner J. Blau
Affiliation:
Materials Ireland Polymer Research Centre, Department of Physics, Trinity College Dublin, Dublin 2, Ireland Department of Chemistry, UMIST, Manchester M60 1QD, United Kingdom Department of Electrical and Electronic Engineering, Trinity College Dublin, Dublin 2, Ireland
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Abstract

A new design for a field effect transistor able to push back the physical limits of Moore's Law is described. An ab initio computational approach is presented that can be further developed to characterize the ON/OFF states of such a device. Distributed response analysis (M. in het Panhuis, P.L.A. Popelier, R.W. Munn, J.G. Ágyán (2001), J. Chem. Phys. 114, 7951-7961) is employed to investigate conductive behavior. The method demonstrates that in analogy to conduction an electron can move across a possible conjugated molecular switching element (para-nitroaniline) in an electric field.

Type
Article
Information
MRS Online Proceedings Library (OPL) , Volume 706: Symposium Z – Making Functional Materials with Nanotubes , 2001 , Z11.6.1
Copyright
Copyright © Materials Research Society 2002

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