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Modeling of Extended Defects in Silicon

Published online by Cambridge University Press:  15 February 2011

M. E. Law ,
K. S. Jones ,
S. K. Earles ,
A. D. Lilak  and
J- W. Xu
M. E. Law
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, [email protected]
K. S. Jones
Affiliation:
Department of MSE, University of Florida, Gainesville, FL, 32611
S. K. Earles
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, [email protected]
A. D. Lilak
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, [email protected]
J- W. Xu
Affiliation:
Semiconductor Group, Texas Instruments, Inc., Dallas, TX 75243
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Abstract

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

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