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Microstructures of Y123 Films on Srtio3, Lagao3 and Laaio3

Published online by Cambridge University Press:  28 February 2011

T. Roy
Affiliation:
MS K‐765, Los Alamos National Laboratory, Los Alamos, NM 87545.
I. D. Raistrick
Affiliation:
MS K‐765, Los Alamos National Laboratory, Los Alamos, NM 87545.
T. E. Mitchell
Affiliation:
MS K‐765, Los Alamos National Laboratory, Los Alamos, NM 87545.
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Abstract

Transmission electron microscopy(TEM) and scanning electron microscopy (SEM) have been used to study the microstructural features of YBa2Cu3O7 (hereafter referred to as Y123) films grown on various single crystal substrates by electron beam deposition. The films are all of high quality with the best observed Jc value being 10 A.cm‐2 at 7K. Cross‐sectional views in TEM have shown that the morphology of the film depends on its thickness. Thinner films (2500 Å) have a single layer of Y123 oriented with its c‐axis perpendicular to the substrate while thicker films(8000 Å) have this same c‐axis perpendicular layer closest to the interface with a c‐axis parallel layer above it. The interface between the film and the substrate is well defined in all cases with no amorphous region at the interface. Chemical analysis shows evidence of interdiffusion between the film and substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1 Laibowitz, R. B., Koch, R. H., Chaudhari, P. and Gambino, R. J., Phys. Rev. B35 (1987)8821.Google Scholar
2 Raistrick, I. D., Garzon, F. H., Beery, J. G., Wilde, D. K., Springer, K. N., Sherman, R. J., Lemons, R. A. and Rollett, A. D., in Science and Technology of Thin film Superconductors, McConnell, R. D. and Wolf, S. A., eds. Plenum Pub. Corp., (1989) 121.Google Scholar
3 Garzon, F. H., Beery, J. G., Brown, D. R., Sherman, R. J. and Raistrick, I. D., Appl. Phys. Lett., 54 (1989) 1365.Google Scholar
4 Bravman, J. C. and Sinclair, R., J. Elec. Mic. Tech. 1 (1984) 53.Google Scholar
5 Hall, E. L., Mogro‐Campero, A., Lewis, N. and Turner, L G., Proc. of 47th Annual meeting of Elec Mic Soc. of Amer., Bailey, G. W., ed, (1989) 180.Google Scholar