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Microscopic role of a surfactant in epitaxial crystal growth
Published online by Cambridge University Press: 10 February 2011
Abstract
We have investigated the kinetic role of a surfactant in the epitaxial crystal growth of Si/Ge using an ab initio molecular dynamics approach. We find that adsorption and diffusion of an adatom on monohydride Si(001) surface is drastically altered from that on a clean surface in several ways. We particularly emphasize the role of H as a surfactant, and this is further compared to typical group V materials.
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- Copyright © Materials Research Society 1998
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