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Metastable Defect Studies in Hydrogen Modulated Multilayer Amorphous Silicon

Published online by Cambridge University Press:  16 February 2011

Daewon Kwon  and
J. David Cohen
Daewon Kwon
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
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Abstract

Junction capacitance methods were employed to investigate the metastable states in a-Si:H with hydrogen modulated Multilayer sample as well as companion homogeneous samples. Each layer in the multilayer sample was grown from the same gas mixture (SiH4+Ar or SiH4+H2) as that of homogeneous samples. We observed that in state A and metastable states produced by a short time light soaking the defect density of each layer in the multilayer sample track well the defect density of the corresponding homogeneous sample. This implies that “local” aspects of metastable defect creation dominate in the earlier light soaked states, and also the stable defects in state A are due to local properties of each layer as introduced during growth. However, for longer time light soaked states and succeeding partial annealed states the defect level of the multilayer sample is higher than either of homogeneous samples. However, the spatial variations of the stable defects are finally recovered when the sample is annealed at the same temperature as the initial state A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 305
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Santos, P. V., Johnson, N. M., and Street, R. A., Phys. Rev. Lett. 67, 2686 (1991)Google Scholar
2. Zafar, S. and Schiff, E. A., Phys. Rev. B 40, 5235 (1989)Google Scholar
3. Stutzmann, M., Jackson, W. B., Smith, A. J., and Thompson, R., Appl. Phys. Lett. 48, 62 (1986)Google Scholar
4. Isoya, J., Yamasaki, S., Okushi, H., Mstsuda, A., and Tanaka, K., Phys. Rev. B 47, 7013 (1993)Google Scholar
5. Stutzmann, M., Jackson, W. B., and Tsai, C. C., J. Non-Cryst. Solids 77&78, 363 (1985)Google Scholar
6. Unold, T. and Cohen, J. D., Appl. Phys. Lett., 58, 723 (1991)Google Scholar
7. Redfield, D., and Bube, R. H., J. Non-Cryst. Solids 137&138, 215 (1991)Google Scholar
8. Carlson, D. E., in Proc., of the Int. Workshop on Amorphous Semiconductors, edited by Fritzsche, H., Han, D. X. and Tsai, C. C. (World Scientific, 1987) pp. 193–198 Google Scholar
9. Michelson, C. E., Gelatos, A. V., and Cohen, J. D., Appl. Phys. Lett. 47, 412 (1985)Google Scholar
10. Yang, L. (private communication)Google Scholar
11. Street, R. A. and Winer, K., Phys. Rev. B 40, 6236 (1989)Google Scholar
12. Wu, Z. Y. and Siefert, J. M., J. Non-Cryst. Solids 137&138, 227 (1991)CrossRefGoogle Scholar
13. Santos, P. V., Jackson, W. B., and Street, R. A., Phys. Rev. B 44, 12800 (1991)Google Scholar