Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T15:54:18.014Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanical, Thermal and Flow Dynamics Issues in Compound Semiconductor MOCVD Reactor Design

Published online by Cambridge University Press:  22 February 2011

A.I. Gurary ,
G.S. Tompa ,
K. Moy  and
P. Zawadzki
A.I. Gurary
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
G.S. Tompa
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
K. Moy
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
P. Zawadzki
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
Get access

Abstract

In recent years Metalorganic Chemical Vapor Deposition (MOCVD) becomes a key epitaxial process for a variety of compound semiconductor devices such as: GaAs/AlGaAs lasers, HEMTs, LEDs, photocathodes, solar cells, and MESFETs; InP/InGaAsP long wavelength lasers and detectors; InP/InGaAs quantum wells and detectors, etc. Development of reliable, high throughput equipment is a major task in the implementation of MOCVD into cost-effective manufacturings. We have used Computational Fluid Dynamics (CFD) and Finite Element Analysis (FEA) software to model thermal, structural, and flow processes for the scaling of EMCORE vertical, high speed rotating disk reactor (RDR) to large dimensions (four 4″ wafers located on 12″ wafer carrier). Flow modeling was used to determine basic reactor geometry and the relation between process parameters such as total reactant flow, temperature, pressure, and rotation speed. Thermal and structural analysis was used to produce a uniform substrate temperature, avoid reactor overheating and decrease thermal stress. Flow and temperature distribution predicted by the modeling were found to be well correlated with experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 135
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Evans, G., Grief, R., Numerical Heat Transfer, 12, 243 (1987).Google Scholar
2. Fotiadis, D.I., Kremer, A.M., McKenna, D.R., and Jensen, K.F., J. Crystal Growth 85, 154 (1987).Google Scholar
3. Biber, C.R., Wang, C.A., and Motakef, S., J. Crystal Growth, 123, 545(1992).Google Scholar
4. Rebenne, H.E. and Arora, R., FDI Technical Report: Design of a CVD Reactor using FIDAP (FDI, Evanston, IL 1992).Google Scholar
5. Tompa, G.S., McKee, M.A., Beckham, C., Zawadzki, P.A., Colabella, J.M., Reinert, P.D., Capuder, K., Stall, R.A., and Norris, P.E., J. Crystal Growth, 93, 220 (1988).Google Scholar
6. Holman, J.P., Heat Transfer, (McGraw-Hill Book Company, New York, 1976).Google Scholar
7. Gurary, A.I., Tompa, G.S., Thompson, A.G., Stall, R.A., Zawadzki, P.Z., and Schumaker, N.E., To be published in the Proceedings of 7th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE VII), May 31-June 3, Yokohama, Japan.Google Scholar