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Measurements Of Stress Evolution During Thin Film Deposition

Published online by Cambridge University Press:  15 February 2011

E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1415
J. A. Floro
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1415
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Abstract

We have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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