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MEASUREMENT OF THE BANDGAP OF GexSi1−x/Si STRAINED-LAYER HETEROSTRUCTURES
Published online by Cambridge University Press: 28 February 2011
Abstract
We have used photocurrent spectroscopy to measure the optical absorption spectra of coherently strained layers of GexSi1−x grown on {001} Si by molecular beam epitaxy. A dramatic lowering of the indirect bandgap, relative to that of unstrained bulk Ge-Si alloys, is observed. Our results for 0 < × < 0.7 are in remarkably good agreement with recent calculations of the effects of misfit strain on the band edges of coherently strained Ge-Si heterostructures.
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