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MBE Growth of GaN using NH3 and Plasma Sources

Published online by Cambridge University Press:  17 March 2011

A.V. Sampath ,
A. Bhattacharyya ,
I. Sandeep ,
H.M. Ng ,
E. Iliopoulos  and
T.D. Moustakas
A.V. Sampath
Affiliation:
Electrical and Computer Engineering, Photonics Center, Boston University8. St. Mary's St., Boston, MA 02215
A. Bhattacharyya
Affiliation:
Electrical and Computer Engineering, Photonics Center, Boston University8. St. Mary's St., Boston, MA 02215
I. Sandeep
Affiliation:
Electrical and Computer Engineering, Photonics Center, Boston University8. St. Mary's St., Boston, MA 02215
H.M. Ng
Affiliation:
Electrical and Computer Engineering, Photonics Center, Boston University8. St. Mary's St., Boston, MA 02215
E. Iliopoulos
Affiliation:
Electrical and Computer Engineering, Photonics Center, Boston University8. St. Mary's St., Boston, MA 02215
T.D. Moustakas
Affiliation:
Electrical and Computer Engineering, Photonics Center, Boston University8. St. Mary's St., Boston, MA 02215
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Abstract

We report on a comparative study of the growth of GaN in an arsenic free MBE system using either the method of plasma activation of molecular nitrogen or catalytic decomposition of ammonia on a heated substrate. We find that while growth with a plasma source leads to smooth films only under Ga- rich conditions, growth with ammonia leads to smooth films under ammonia-rich conditions. In both cases we find a 2×2 surface reconstruction when using an AlN buffer, which is evidence that material grown with this buffer layer has the Ga-polarity. In the case of plasma growth we also investigated the use of a GaNbuffer and found that at the growth temperature the surface is unreconstructed, however it undergoes 3×3 reconstruction upon cooling to 300 °C. This observation is evidence that material grown on a GaN buffer has the N-polarity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.56
Copyright
Copyright © Materials Research Society 2001

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References

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