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Luminescence Properties of Ytterbium and Oxygen Coimplanted InP

Published online by Cambridge University Press:  10 February 2011

H. J. Lozykowski  and
A. K. Alshawa
H. J. Lozykowski
Affiliation:
Ohio University, Athens, Ohio.I.Brown, Lawrence Berkeley Laboratory, University of California at Berkeley
A. K. Alshawa
Affiliation:
Ohio University, Athens, Ohio.I.Brown, Lawrence Berkeley Laboratory, University of California at Berkeley
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Abstract

In this work we report a systematic study of the effect of oxygen on ytterbium 4f- 4f emission by coimplanting Yb and O into InP. The PL spectra of InP: Yb and InP: (Yb+O) as a function of annealing temperature and duration were studied. In addition the photoluminescence and kinetic processes were investigated as a function of temperature and excitation intensity.The investigation shows that the codoped oxygen reduces drastically the Yb3+ emissioon from SI and n-type InP:Yb under intrinsic excitation. The codoping of Yb and 0 may create a complex involving a YbIn and Op. This structured isoelectronic (YbIn- Op) complex, may behave as a deep trap (or a deep donor) located approximately at the middle of bandgap. Exciton bound to such centers will not have sufficient energy to excite the core Yb 4f electrons by Auger direct energy transfer process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 367
Copyright
Copyright © Materials Research Society 1996

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References

1. Ennen, H. and Schneider, J., J. Electron Mater., 13, 115, (1984).Google Scholar
2. Masterov, V.F. and Zakharenkov, L.F., Soy. Phys. Semicond. 24, 383, (1990).Google Scholar
3. Przybylinska, H., Hendorfer, G., Bruckner, M., Palmetshofer, L., and Jantsch, W., Appl. Phys. Lett. 61, 2181, (1994), and references therein.Google Scholar
4. Adler, D.L., Jacobson, D.C., Eaglesham, D.J., Marcus, M.A., Benton, J.L., Poate, J.M., and Citrin, P. H., Appl. Phys. Lett. 61, 2181, (1992).Google Scholar
5. Needels, M., Schluter, M. and Lannoo, M., Phys. Rev. B 457, 15533, (1993).Google Scholar
6. a) Auzel, F., Jean-Louis, A.M., Toudic, T., J. Appl. Phys. 66, 3952, (1989), b) P. Galtier, T. Benyattou, J.P. Pocholle, M.N. Charasse, G. Guillot and F.P. Hirz, Inst. Phys. Conf. Ser. 106, 327, (1990), c) P.N. Favennec, H. L'Haridon, D. Moutonnet, M. Salvi , M. Gauneau and A. C. Papadopoudo, Inst. Phys. Conf. Ser. 106, 333, (1990), d) P.N. Favennec, M. Gauneau, H.L'Haridon,B. Deveaud, C.A. Evans, and R.J. Blattner, Appl. Phys. Lett. 38, 271, (1981), e) A.E Von Neida, S.J. Pearton,W.S. Hobson and C.R. Abernathy, Appl. Phys. Lett. 54,1540, (1989).Google Scholar
7. Colon, J.E., Elsaesser, D.W., Yeo, Y.K., Hengehold, R.L. and Pomrenke, G.S., Appl. Phys. Lett,63, 216, (1993).Google Scholar
8. Takahei, K., Taguchi, A., and Horikoshi, Y., J. Appl. Phys., 76, 4332, (1994).Google Scholar
9. a) Nakagome, H., Takahei, K., and Homma, Y., J. Cryst. Growth, 85, 345, (1987), b) Aszodi, J. Weber, Ch.Uihlein, L. Pu-lin, H. Ennen, U. Kaufmann, J. Schneider and J. Windscheif, Phys. Rev. B, 31, 7767 (1985), c) V.F. Masterov, V.V. Romanov, and K.F. Shtel'mkh, Sov. Phys. Solid State 25, 824, (!983)Google Scholar
10. Lozykowski, H.J., Alshawa, A.K. and Brown, I., J. Appl. Phys. 76, 4836, (1994), and references therein.Google Scholar
11. a) Kasatkin, V.A., Kesamanly, F.P., Makarenko, V.G., and Tselishcheva, N.S., Sov. Phys. Semicond. 15, 1414, (1982). b).V.F. Masterov and L.F. Zakharenkov, Sov. Phys. Semicond. 24, 383, (1990).Google Scholar
12. Lozykowski, H.J., Phys. Rev. B 48, 17758, (1993).Google Scholar
13. a) L. He and W.A. Anderson, Proceedings of Fourth Int. Conf. on InP and related Materials, IEEE Catalog # 92CH3104–7, (NewYork NY, IEEE 1992), p. 336 and references therein. b) Dean, P.J. and Henry, C.H., Phys. Rev. 176, 928,(1968).Google Scholar
14. Lozykowski, H.J., et al. ( in preparation ).Google Scholar