Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T18:50:44.498Z Has data issue: false hasContentIssue false

Luminescence And Structural Properties Of InGaN Epilayer, Quantum Well And Quantum Dot Samples Using Synchrotron Excitation

Published online by Cambridge University Press:  17 March 2011

K.P. O'Donnell
Affiliation:
Dept of Physics and Applied Physics, Strathclyde University, Glasgow G4 0NG, Scotland, UK
R.W. Martin
Affiliation:
Dept of Physics and Applied Physics, Strathclyde University, Glasgow G4 0NG, Scotland, UK
M.E. White
Affiliation:
Dept of Physics and Applied Physics, Strathclyde University, Glasgow G4 0NG, Scotland, UK
M.J. Tobin
Affiliation:
CLRC Daresbury Laboratories, Warrington, WA4 4AD, England, UK
J.F.W. Mosselmans
Affiliation:
CLRC Daresbury Laboratories, Warrington, WA4 4AD, England, UK
I.M. Watson
Affiliation:
Institute of Photonics, Strathclyde University, Glasgow G4 0NW, Scotland, UK
B. Damilano
Affiliation:
CRHEA/CNRS, Valbonne, France
N. Grandjean
Affiliation:
CRHEA/CNRS, Valbonne, France
Get access

Abstract

The Daresbury synchrotron radiation source (SRS) provides bright, tunable x-rays for scattering and absorption probes of local structure. Scanning confocal microscopy and luminescence decay measurements employ the SRS in alternative ways, as a tunable luminescence excitation engine and as a source of weak, 160 ps pulses with a large pulse-topulse separation, respectively. This report first describes local atomic structure studies of InGaN epilayers by extended x-ray absorption fine structure (EXAFS). In addition, we report photoluminescence (PL) imaging, PL microspectroscopy and photoluminescence decay studies of various nitride samples, including tailored InGaN quantum wells and discs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.http://srs.dl.ac.uk/Google Scholar
2. O'Donnell, K.P. et al., Journal of Microscopy 193,105108 (1999)Google Scholar
3. Chen, X. et al., Applied Physics Letters 60, 26722674 (1992)Google Scholar
4. Stricht, Wim Van der, Ph.D. Thesis (University of Ghent, unpublished) (1999)Google Scholar
5. Grandjean, N. et al, MRS Fall Meeting 2000, G12.1(2000)Google Scholar
6. O'Donnell, K.P. et al., MRS Fall Meeting 1999, W11.26 (1999)Google Scholar
7. O'Donnell, K.P. et al., Phys. Stat. Sol (b) 216, 151154 (1999)Google Scholar
8. Binstead, N., EXCURV98 computer programme (Daresbury Laboratories) (1998)Google Scholar
9.http://srs.dl.ac.uk/xrs/Google Scholar
10. Bayliss, S.C. et al., Mat. Sci. Eng. B59, 292297 (1999)Google Scholar
11. Mosselmans, J.F.W. et al., in preparation.Google Scholar
12.A similar result was reported by M.S. Jeong et al, MRS Fall Meeting 2000, G11.55 Google Scholar
13. Pophristic, M. et al., Applied Physics Letters 73, 35503553 (1998)Google Scholar
14. O'Donnell, K.P. et al., Phys. Stat. Sol. (b) 216, 141144 (1999)Google Scholar
15. Lefebvre, P. et al., MRS Fall Meeting 2000, G10.1 (2000)Google Scholar
16. O'Donnell, K.P. et al, E-MRS Spring Meeting, 2000 (to be published).Google Scholar
17. Matilla, T. and Zunger, A., Journal of Applied Physics 85, 160167 (1999)Google Scholar