Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:31:59.815Z Has data issue: false hasContentIssue false
  • English
  • Français

LPE Growth of Doped Sige Layers Using Multicomponent Phase Diagrams Calculations

Published online by Cambridge University Press:  15 February 2011

J.-P. Fleurial ,
A. Borshchevsky  and
D. Irvine
J.-P. Fleurial
Affiliation:
Jet Propulsion Laboratory/ California Institute of Technology 4800 Oak Grove Drive, Pasadena, CA 91109
A. Borshchevsky
Affiliation:
Jet Propulsion Laboratory/ California Institute of Technology 4800 Oak Grove Drive, Pasadena, CA 91109
D. Irvine
Affiliation:
Jet Propulsion Laboratory/ California Institute of Technology 4800 Oak Grove Drive, Pasadena, CA 91109
Get access

Abstract

Heavy doping of n-type Si-Ge alloys is necessary for improving their high temperature thermoelectric properties. Because of the limited solid solubility of the best dopant available, phosphorus, simultaneous additions of gallium were started several years ago. The substantially higher carrier concentration values obtained in such super-saturated, hot-pressed SiGe/GaP materials point to significant changes in dopant solid solubilities. To better understand the behavior of these alloys, investigation of homogeneous single crystalline materials were needed. As a near-thermodynamic equilibrium technique with processing temperatures well below the melting point of these materials, liquid-phase epitaxy (LPE) was particularly suited to the study of the mechanisms of multidoping. Based on successful crystal growth of Si1-xGex thin films using metals such as Ga, In, Sn and Bi for solvents, several experiments were designed to grow multi-doped SiGe layers with III-V dopant combinations. Knowledge of ternary and quaternary phase diagrams is essential to develop the LPE process. Ternary Si-Ge-M systems computations in good agreement with experimental determinations were used to calculate some of the necessary multicomponent phase diagrams and assess the strength of the various III–V interactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 234: Symposium V – Modern Perspectives on Thermoelectrics and Related Materials , 1991 , 123
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wood, C., Rep. Prog. Phys. 51, 459 (1988).CrossRefGoogle Scholar
2. Dismukes, J.P., Ekstrom, L., Stegmeier, E.F., Kudman, I. and Beers, S., J. Appl. Phys. 35 (10), 2899 (1964).Google Scholar
3. Erofeev, R.S., Iordanishvilii, E.K. and Petrov, A.V., Sov. Phys. Sol. St., 7, 2470 (1966).Google Scholar
4. Vandersande, J.W., Wood, C. and Draper, S.L., Mat. Res. Soc. Symp. Proc. 97, 347–352 (1987).Google Scholar
5. Fleurial, J.P., Borshchevsky, A. and Vandersande, J.W., 8th Symp. on Space Nuclear Power Systems Proc., Albuquerque NM, 1, 451–457 (1991).Google Scholar
6. Fleurial, J.P. and Borshchevsky, A., VIIIth Int. Conf. on Thermoelectrics, Nancy, France (1989).Google Scholar
7. Alonso, M.I. and Bauser, E., J. Appl. Phys. 62 (11), 4445–4449 (1987).Google Scholar
8. Sukegawa, T., Izawa, M., Katsuno, H., Tanaka, A. and Kimura, M., J. Crys. Growth 99, 274–277 (1990).Google Scholar
9. Trah, H.P., J. Crys. Growth 102, 175–182 (1990).CrossRefGoogle Scholar
10. Borshchevsky, A., VIIth Int. Conf. on Thermoelectrics, Arlington TX, 23 (1988).Google Scholar
11. Fleurial, J.P. and Borshchevsky, A., J. Electrochem. Soc., 137 (9), 2928–2937 (1990).CrossRefGoogle Scholar
12. Borshchevsky, A., Fleurial, J.P. and Vandersande, J.W., 25th Intersoc. Ener. Conv. Eng. Conf., Reno NV, 2, 397–401 (1990).CrossRefGoogle Scholar
13. McCormack, J. and Fleurial, J.P., 1991 MRS Spring Meeting, Anaheim, CA, (1991).Google Scholar
14. Glazov, V.M. and Zemskov, V.S., Physico-chemical Principles of Semiconductor DopinQ, (IPST, Jerusalem, 1968).Google Scholar
15. Fleurial, J.P. and Borshchevsky, A., IXth Int. Conf. on Thermoelectrics, Pasadena, CA (1990).Google Scholar
16. Akopyan, R.A., Mamedova, E.T. and Bakhtikyan, T.O., Izv. Akad. Nauk SSSR, Neorg. Mater., 26 (2), 229–232 (1990) [Inorg. Mater., 187–190 (1990)].Google Scholar
17. Larsen, A. Nylansted, Andersen, P.E., Gaiduk, P. and Larsen, K. Kyllesbech, Mater. Sci. Engin., B4, 107–112 (1989).Google Scholar
18. Shiraev, S.Y., Larsen, A. Nylansted and Safronov, N., J. Appl. Phys., 68 (8), 3953–3956 (1990).CrossRefGoogle Scholar
19. Swanson, M.L., Wichert, T. and Quenneville, A.F., Appl. Phys. Lett., 49 (5), 265–267 (1986).Google Scholar
20. Wichert, T., Swanson, M.L. and Quenneville, A.F., Phys. Rev. Lett., 57 (14), 1757–1760 (1986).Google Scholar
21. Cowern, N.E.B., Appl. Phys. Lett., 54 (8), 703–705 (1989).CrossRefGoogle Scholar
22. Scoville, N., Bajgar, C., Vandersande, J.W. and Fleurial, J.-P., 1991 MRS Spring Meeting, Anaheim CA (1991).Google Scholar