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Low Temperature Oxynitridation of SiGe in NO/N2O Ambients

Published online by Cambridge University Press:  01 February 2011

Anindya Dasgupta  and
Christos G. Takoudis
Anindya Dasgupta
Affiliation:
Department of Chemical Engineering, University of Illinois at Chicago, 810 South Clinton Street, Chicago, Illinois 60607.
Christos G. Takoudis
Affiliation:
Department of Chemical Engineering, University of Illinois at Chicago, 810 South Clinton Street, Chicago, Illinois 60607.
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Abstract

X-Ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and spectral ellipsometry have been used to study sub-35 Å low temperature oxynitrides of SiGe. The oxynitridations steps have been performed at 550°C and 650°C, while the oxynitridation feed gases have been preheated to 900°C and 1000°C, respectively, before entering the reaction zone. XPS and SIMS data suggests that NO-assisted oxynitridation incorporates more nitrogen than the N2O-assisted one, while there is minimal Ge segregation towards the dielectric/substrate interface in both oxynitridation processes. SIMS data suggests that the nitrogen is distributed throughout the film in contrast to high temperature Si oxynitridation where nitrogen incorporation takes place near the dielectric/substrate interface. Spectral Ellipsometry has been used to measure the final thickness of the oxynitrides film. These results are discussed in the context of an overall mechanism of the oxynitridation of SiGe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A10.6
Copyright
Copyright © Materials Research Society 2002

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