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Low Energy Ion Beam Assisted Deposition of Low Resistivity Aluminum Using TMAA

Published online by Cambridge University Press:  22 February 2011

H. Q. Yan ,
H. Wang  and
A. J. Steckl
H. Q. Yan
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering University of Cincinnati, OH 45221-0030
H. Wang
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering University of Cincinnati, OH 45221-0030
A. J. Steckl
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering University of Cincinnati, OH 45221-0030
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Abstract

Thermal deposition and Ga+ ion beam assisted deposition of Al using TMAA have been studied. At temperatures between 95ºC and 105ºC, where thermal deposition is negligible, the introduction of a low energy Ga+ ion beam (8 to 10 keV) produces selective deposition. Ion beam seeding followed by ion beam irradiation during TMAA flow leads to consistent selectivity at this temperature range. The lowest resistivity of selectively deposited Al film is 7 µΩ-cm, only 2.5 times the bulk Al resistivity. The selective deposition rate is about 300Å/min. Depositions at higher temperature produced very low resistivity Al films, but with a decreasing selectivity ratio. X-ray diffraction showed that deposited Al films are polycrystalline, with very small FWHM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 863
Copyright
Copyright © Materials Research Society 1994

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References

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