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Low Dielectric Constant Fluorine Doped Teos Films

Published online by Cambridge University Press:  15 February 2011

Viren V. S. Rana ,
Mohan Bhan ,
Anand Gupta ,
Soonil Hong  and
Peter Lee
Viren V. S. Rana
Affiliation:
Applied Materials, Inc., 3050 Bowers Ave, Santa Clara, CA 95054.
Mohan Bhan
Affiliation:
Applied Materials, Inc., 3050 Bowers Ave, Santa Clara, CA 95054.
Anand Gupta
Affiliation:
Currently at SpeedFam Corporation, 7406 W. Detroit, Chandler, AZ 85226.
Soonil Hong
Affiliation:
Applied Materials, Inc., 3050 Bowers Ave, Santa Clara, CA 95054.
Peter Lee
Affiliation:
Applied Materials, Inc., 3050 Bowers Ave, Santa Clara, CA 95054.
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Abstract

The fluorine doped TEOS films obtained using an inorganic gaseous dopant source (SiF4) and an organic liquid dopant source (TEFS) are described. The stability of fluorine in these films is strongly dependent on process conditions. The limit of stability for the most stable films is described. The gap fill capability of these films was found to depend strongly on the type of the fluorine precursor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 239
Copyright
Copyright © Materials Research Society 1997

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References

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