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Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers

Published online by Cambridge University Press:  15 March 2011

R. Dimitrov ,
V. Tilak ,
M. Murphy ,
W.J. Schaff ,
L.F. Eastman ,
A.P. Lima ,
C. Miskysa ,
O. Ambacher  and
M. Stutzmann
R. Dimitrov
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853, U.S.A.
V. Tilak
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853, U.S.A.
M. Murphy
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853, U.S.A.
W.J. Schaff
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853, U.S.A.
L.F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853, U.S.A.
A.P. Lima
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, 85748 Garching, Germany
C. Miskysa
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, 85748 Garching, Germany
O. Ambacher
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, 85748 Garching, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, 85748 Garching, Germany
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Abstract

In this study thin AlxGa1−xN nucleation layers on sapphire were patterned and overgrown by plasma-induced molecular beam epitaxy (PIMBE) and metalorganic chemical vapor deposition (MOCVD) to obtain adjacent regions of GaN and AlGaN/GaN heterostructures with different polarities. The role of polarity on the structural and electrical properties of epitaxial layers and AlGaN/GaN heterostructures was investigated for samples grown on patterned AlN or GaN nucleation layers. Epitaxial GaN and AlGaN/GaN heterostructures grown on Al-face AlN or N- face GaN nucleation layers were found to be Ga-face or N-face, respectively, independent of the technique used for the overgrowth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T4.6.1
Copyright
Copyright © Materials Research Society 2000

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References

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