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Laser-Initiated Aluminothermic Reaction Applied to Preparing Mo-Si Film on Silicon Substrates

Published online by Cambridge University Press:  26 February 2011

Li Ding ,
Lu Xuebiao ,
Zhou Zhengzhuo ,
Qiu Mingxin  and
Lin Chenglu
Li Ding
Affiliation:
Shanghai Institute of Laser Technology, Shanghai, China
Lu Xuebiao
Affiliation:
Shanghai Institute of Laser Technology, Shanghai, China
Zhou Zhengzhuo
Affiliation:
Shanghai Institute of Laser Technology, Shanghai, China
Qiu Mingxin
Affiliation:
Shanghai Institute of Laser Technology, Shanghai, China
Lin Chenglu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica. Shanghai, China
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Abstract

Mo-Si films on silicon substrates has been prepared by the CO2 laser-initiated aluminothermic reaction. The features of these films have been characterized by RBS, AES, etc. The formation mechanism is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 487
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Murarka, S.P., “Suicides for VLS Application” (Academic, New York, 1983)Google Scholar
2 Poate, J.M., Tu, K.N. and Mayer, J.W., “Thin Film-interdiffusion and Reactions” (John Wiley and Sons, Inc., New York, 1983)Google Scholar
3 Urst, I., Alexandrescu, R., Cracium, V., Mihailescu, I.N., Morjan, I., Al. Popa, Applied Laser, 6 157(1986) (in Chinese)Google Scholar
4 Li, D., Zhou, Z.Z., Zeng, Y.J., Gong, H.M., Qiu, M.X. and Lin, G.L., presented at the 1987 International Conference on Laser Advanced Materials Processing, Osaka, Japan. 1987(unpublished)Google Scholar