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Laser-Induced Multi-Crystallization of Thin Germanium Films

Published online by Cambridge University Press:  25 February 2011

C. Ortiz ,
K.A. Rubin  and
S. A. Iuria
C. Ortiz
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
K.A. Rubin
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
S. A. Iuria
Affiliation:
Materials Science and Engineering Department, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Abstract

We report here the crystallization kinetics of thin (35nm and 60nm) amorphous as-deposited Ge filins using diffraction limited laser beam irradiation and laser pulses between 30ns and IreS. The recrystallization of crystalline as-deposited films was also studied for similar laser conditions. Crystallization was observed for pulses as short as 50ns. We conclude that the use of small beam spots (-1μm) gives a very different crystallization morphology from that observed previously for larger beam diameter and same laser pulse length. In our case for short irradiation times, the nucleation process dominates over crystal growth. Laser irradiation of as-deposited crystalline films produced grains with significantly less defects than grains crystallized from as-deposited amorphous films. Temperature calculations allow us to understand these results by showing that only the small spot irradiation sustains the material at high temperature for times comparable to the pulse width.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 455
Copyright
Copyright © Materials Research Society 1989

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References

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