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Laser Ablation Fabricated Nano-Composite of Metal Silicide Crystallines in Silicon Wire

Published online by Cambridge University Press:  17 March 2011

Jifa Qi  and
Yasuaki Masumoto
Jifa Qi
Affiliation:
Single Quantum Dot Project, ERATO, Japan Science and Technology Corporation, Tsukuba, Ibaraki 300-2635, Japan
Yasuaki Masumoto
Affiliation:
Single Quantum Dot Project, ERATO, Japan Science and Technology Corporation, Tsukuba, Ibaraki 300-2635, Japan Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Abstract

Silicon nanowires containing a high density of copper atoms were prepared by laser ablation of Si/metal mixture targets at 1200 °C in argon gas flow. Copper atoms can gather in Si nanowires and precipitate into copper silicide nanocrystals distributed alone the wire axis. The diameters of the copper silicide nanocrystals increase with that of the host nanowire. The possible growth process of the composite nanowires was proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F12.5.1
Copyright
Copyright © Materials Research Society 2001

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