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A Large Grain Polycrystalline Silicon Film for Resistive Bolometers

Published online by Cambridge University Press:  01 February 2011

Tae-Sik Kim  and
Hee Chul Lee
Tae-Sik Kim
Affiliation:
Department of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST), 373–1, Kusong-dong, Yusong-gu, Taejon 305–701, Korea
Hee Chul Lee
Affiliation:
Department of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST), 373–1, Kusong-dong, Yusong-gu, Taejon 305–701, Korea
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Abstract

Large grain polycrystalline silicon films as a sensing material for infrared bolometers have been proposed and investigated. Using a seed selection through ion channeling technique, we have successfully increased the average grain size of polysilicon films up to 1670Å. The achieved TCR value at 20°C and grain boundary defect density of the film are found to be as high as -2.46%/K for a resistivity of 30Ωcm and to be about 1.752×1012/cm2, respectively. From the measurement of noise characteristics of the film, the value of k, 1/f noise parameter, is calculated to be 1.35×10-9. As a result, the estimated detectivity is found to be 5.6×108cmHz1/2/W.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 785: Symposium D – Materials and Devices for Smart Systems , 2003 , D14.6
Copyright
Copyright © Materials Research Society 2004

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References

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