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Large Area Continuous Electron Beam for Semiconductor Processing

Published online by Cambridge University Press:  22 February 2011

Cameron A. Moore ,
J. J. Rocca ,
G. J. Collins ,
P. E. Russell  and
J. Geller
Cameron A. Moore
Affiliation:
Colorado State University, Department of Electrical Engineering, Fort Collins, CO 80523;
J. J. Rocca
Affiliation:
Colorado State University, Department of Electrical Engineering, Fort Collins, CO 80523;
G. J. Collins
Affiliation:
Colorado State University, Department of Electrical Engineering, Fort Collins, CO 80523;
P. E. Russell
Affiliation:
Joel Usa, 11 Dearborn Road, Peabody, MA 01960.
J. Geller
Affiliation:
Joel Usa, 11 Dearborn Road, Peabody, MA 01960.
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Abstract

We have achieved wide area (38 cm2) electron beam heating of semiconductor materials using a glow discharge electron beam with electron energies between 3 and 7 keV. A continuous beam 7 cm in diameter with a power density up to 90 W/cm2 was used to anneal both boron-implanted (30 keV, 5 × 1015 atoms/cm2) n-type <100> silicon wafers as well as two types of Ti-Si composite films to form this titanium disilicide Annealing of the implanted samples was obtained without redistribution of the original dopant profile using a 15-sec. electron beam exposure. Formation of TiSi2 was found to decrease the sheet resistivity of these samples a factor of ten for both 400 Å films of Ti on Si and codeposited Ti-Si mixtures of overall stoichiometry TiSi2. Due to the high electron beam power density achieved over a large area, one can uniformly anneal an entire wafer in a single exposure without sample or beam scanning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 273
Copyright
Copyright © Materials Research Society 1984

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References

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