Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:36:18.532Z Has data issue: false hasContentIssue false

Lanthanide Doped Cubic Boron Nitride

Published online by Cambridge University Press:  11 February 2011

U. Vetter
Affiliation:
2. Physikalisches Institut, Universität Göttingen, Bunsenstr. 7–9, D-37073 Göttingen, Germany
T. Taniguchi
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
U. Wahl
Affiliation:
Instituto Tecnologico e Nuclear, PT-2686–953 Sacavem, Portugal
J. Correia
Affiliation:
CERN, 1211 Geneva 23, Switzerland
A. Müller
Affiliation:
2. Physikalisches Institut, Universität Göttingen, Bunsenstr. 7–9, D-37073 Göttingen, Germany
C. Ronning
Affiliation:
2. Physikalisches Institut, Universität Göttingen, Bunsenstr. 7–9, D-37073 Göttingen, Germany
H. Hofsäss
Affiliation:
2. Physikalisches Institut, Universität Göttingen, Bunsenstr. 7–9, D-37073 Göttingen, Germany
M. Dietrich
Affiliation:
CERN, 1211 Geneva 23, Switzerland
Isolde Collaboration
Affiliation:
CERN, 1211 Geneva 23, Switzerland
Get access

Abstract

First basic investigations on lanthanide implanted cubic boron nitride were performed with focus on the site of the implanted ions as well as their luminescence behaviour. In order to investigate the lattice sites of lanthanides in c-BN, we implanted single crystal c-BN with radioactive 139Ce ions using the on-line isotope separator ISOLDE at CERN. After the samples were annealed at 1193 K, direct lattice location studies were performed using the conversion electron emission channeling technique and showed a near-substitutional fraction of the implanted ions of at least 10 %. Additionally, poly crystalline c-BN samples were implanted with stable Eu and Tm ions in order to investigate the luminescence properties of triply ionised lanthanides in the c-BN host. It is found that the annealing of the implanted samples at high temperature and high pressure results in strong luminescence of the Eu3+ ions in the orange and moderate luminescence of the Tm3+ ions in the blue. In case of the Eu implanted samples, the luminescence is assigned to the 5D0-7FJ intra-4f electron transitions of Eu3+, in case of the Tm implanted samples, detectable transitions are 1D2-3H6, 1D2-3F4, 1G4-3H6. of Tm3+.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Levinshtein, M. E., Rumyantsev, S. L., and Shur, M. S., Properties of Advanced Semiconductor Materials (Wiley-Interscience, New York, 2001).Google Scholar
2. Karch, K. and Bechstedt, F., Phys. Rev. B. 56, 74047414 (1997).Google Scholar
3. Hofsäss, H. and Ronning, C., in: Proc. 2nd Int. Conf. on Beam Processing of Advanced Materials, eds. Singh, J., Copeley, S. M., Mazumder, J., (ASM Int. Materials Park, 1996), p. 29.Google Scholar
4. Vetter, U., Reinke, P., Ronning, C., Hofsäss, H., Schaaf, P., Baruth-Ram, K., and Taniguchi, T., Diamond and Related Materials, in print.Google Scholar
5. Taniguchi, T. and Yamaoka, S., J. Crystal Growth 222, 549557 (2001).Google Scholar
6. Taniguchi, T., Akaishi, M., and Yamaoka, S., J. Mater. Res. 14, 162 (1999).Google Scholar
7. Taniguchi, T., Watanabe, K., Koizumi, S., Sakaguchi, I., Sekiguchi, T., and Yamaoka, S., Appl. Phys. Lett. 81, 41454147 (2002).Google Scholar
8. Hofsäss, H. and Lindner, G., Phys. Rep. 210, 121 (1991).Google Scholar
9. Kugler, E., Hyperfine Interact. 129, 23 (2000).Google Scholar
10. Weilhammer, P. and et al., Nucl. Instr. and Meth. A 383 (1996).Google Scholar
11. Wahl, U., Correia, J. G., Cardoso, S., Marques, J. M., Vantomme, A., Langouche, G., and the ISOLDE Collaboration, Nucl. Instr. and Meth. B 136, 744 (1998).Google Scholar
12. Uhrmacher, M., Neubauer, M., Bolse, W., Ziegeler, L., and Lieb, K. P., Nucl. Instr. and Meth. B 139, 306 (1998).Google Scholar