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Kinetics of Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Buried Amorphous Si Layers

Published online by Cambridge University Press:  15 February 2011

J. C. McCallum
J. C. McCallum*
Affiliation:
Microanalytical Research Centre, School of Physics, University of Melbourne, Parkville, Victoria 3052, Australia, [email protected]
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Abstract

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers produced by ion implantation. Buried a-Si layers formed by self-ion implantation provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si, free from the rate-retarding effects of H. For the first time, dopant-enhanced SPE rates have been measured under these H-free conditions. Buried a-Si layers containing uniform As concentration profiles ranging from 1–16.1 × 1019 As.cm−3 were produced by multiple-energy ion implantation and time resolved reflectivity was used to measure SPE rates over the temperature range 480–660°C. In contrast to earlier studies, the dopant-enhanced SPE rate is found to depend linearly on the As concentration over the entire concentration range measured. The SPE rate can be expressed in the form, v/vi(T) = 1 + N/[No exp(-ΔE/kT)], where vi(T) is the intrinsic SPE rate, N is the dopant concentration and No = 1.2 × 1021 cm−3, ΔE = 0.21 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 137
Copyright
Copyright © Materials Research Society 1997

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References

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