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Kinetic Study Of Crystallisation In Amorphous Thin Lpcvd Si Films
Published online by Cambridge University Press: 15 February 2011
Abstract
The crystallisation behaviour of LPCVD silicon films has been investigated by TEM from in situ isothermal annealing of undoped a-Si films deposited from disilane (Si2H6) at temperatures 450,465 and 480 °C and at gas pressure of 200 MTorr. Nucleation kinetics, grain growth rates and crystallisation kinetics were determined for temperatures ranging from 600 to 675 °C. Nucleation kinetics have been experimentally determined in the early first stages of annealing : they do not show any steady-state rate and are fitted according to a power law. Experimental data for crystallisation kinetics are fitted by an Avrami law without introducing any incubation time.
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- Copyright © Materials Research Society 1994