Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-20T00:29:27.218Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion-Implantation Effects on Spin-on-Glass (Sol-Gel) SiO2 Films

Published online by Cambridge University Press:  28 February 2011

Y. Shacham-Diamand ,
N. Moriya  and
R. Kalish
Y. Shacham-Diamand
Affiliation:
214 Phillips Hall, Cornell University, Ithaca, NY 14853
N. Moriya
Affiliation:
Solid State Institute, Technion - I.I.T., Haifa 32000, Israel
R. Kalish
Affiliation:
Solid State Institute, Technion - I.I.T., Haifa 32000, Israel
Get access

Abstract

Silicon and phosphorus ions were implanted into Spin-On-Glass (Sol-Gel) SiO2 films and were found to modify the material properties. Two SOG types, polysiloxane andsilicate, were ion-implanted with doses in the 5 × 1014 − 1.65 × 1016cm−2range and energies of 40keV - 190keV. The implanted SOG on silicon samples were characterized by ellipsometry, infra-red spectroscopy, etching and capacitance measurement of aluminum/SOG/silicon devices. The results indicate that the polysiloxane type SOG shrinks due to the implant and its effective refractive index increases. The ion-implant of the polysiloxane SOG also changed its structure and composition as seen by the variations of the infra-red transmission spectrum, etching characteristics, and dielectric constant. Silicate SOG exhibits less shrinkage due to the implant but its other characteristics show dependence on the dose similar to that of the polysiloxane SOG.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 180: Symposium A – Better Ceramics Through Chemistry IV , 1990 , 703
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE LIST

[1] Dupuis, F., Oldham, W.G., and Shacham-Diamand, Y., VLSI Symposium, 52 (1985)Google Scholar
[2] Pai, P., Chettey, A., Roat, R., Cox, N. and Ting, C., J. of Electrochemical Society, 11, 2830 (1989).Google Scholar
[3] Shacham-Diamand, Y. and Nachumovski, I., J. of Electrochemical Society, 137 190 (1990).Google Scholar