Article contents
Ion-Beam-Hydrogenated Amorphous Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
A Kaufman ion-beam source has been used to study the rehydrogenation and postdeposition hydrogenation of amorphous silicon. In the rehydrogenation study, hydrogen atoms were implanted into glow-discharge-deposited amorphous silicon materials in which the hydrogen content had been driven out by heating. In the posthydrogenation study, amorphous silicon samples with no hydrogen content detectable by infrared absorption and no photoconductivity were used as the starting material. These materials were deposited by thermal CVD, magnetron sputtering, or RF glow discharge.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1988
References
- 3
- Cited by