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Ion implantation of Carbon and Silicon into Ge2Sb2Te5: Ion Profiles and Post Crystallization Redistribution

Published online by Cambridge University Press:  20 July 2011

Guy M. Cohen ,
Simone Raoux ,
Marinus Hopstaken  and
Siegfried Maurer
Guy M. Cohen
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
Simone Raoux
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
Marinus Hopstaken
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
Siegfried Maurer
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

Ion implantation of Ge2Sb2Te5 (GST) enables localized doping of the film by using conventional lithography. Although the doped region dimensions and the doping concentration profile are defined by the opening in the mask and the ion energy, longitudinal and lateral straggling of implanted ions leads to a spread in the ions final location. Additionally, a thermal treatment such as one that induces a phase transition may lead to redistribution of the implanted dopants and further increase the spread. In this work we demonstrate doping of GST by ion implantation. Using Secondary Ion Mass Spectrometry (SIMS) we studied the as-implanted doping profiles obtain by ion implantation of carbon and silicon into GST. We also investigated by SIMS the dopant redistribution following a recrystallization annealing. The as-implanted ion profiles were found to be in fair agreement with TRIM simulation. The dopants profiles show little change after a crystallization annealing at 200°C for silicon doping and at 350°C for carbon doping.

Keywords

ion-implantationsecondary ion mass spectroscopy (SIMS)memory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1338: Symposium R – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2011 , mrss11-1338-r05-07
Copyright
Copyright © Materials Research Society 2011

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References

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