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Ion Damage Studies in GaAs-Algaas Ultra-Narrow Wires

Published online by Cambridge University Press:  26 February 2011

T. L. Cheeks ,
M. L. Roukes ,
A. Scherer ,
B. P. Van Der Gaag  and
H. G. Craighead
T. L. Cheeks
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, N.J. 07701
M. L. Roukes
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, N.J. 07701
A. Scherer
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, N.J. 07701
B. P. Van Der Gaag
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, N.J. 07701
H. G. Craighead
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, N.J. 07701
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Abstract

Low energy ion damage effects have been investigated in GaAs-A1GaAs two dimensional electron gas (2DEG) materials. The effect of ion mass (He, Ar, Xe) and adsorbed C12 on the charge carrier density and mobility has been studied for ion bombarded 2DEG systems. The 2DEG mobility was significantly reduced by ion damage with the effect becoming more dramatic with smaller ion mass. For the same treatment, the two dimensional carrier density was relatively unaffected. The results of He ion exposure showed serious degradation of the 2DEG with moderate ion dose. Electrical measurements were performed to determine the conducting widths of narrow patterned wires. For the same structural widths (mask width) He defined wires showed smaller electrical widths than Ar milling in the presence of chlorine. Serious limitations to patterning small structures may be imposed using beam processes that include He or other light mass species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 701
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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