Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:48:37.420Z Has data issue: false hasContentIssue false

Investigation of CVD β-SiC Surfaces Produced VIA a “Novel” Surface Replication Process

Published online by Cambridge University Press:  21 February 2011

Aliki K. Collins
Affiliation:
Morton International/CVD Inc., Woburn, MA 01810
Joseph T. Keeley
Affiliation:
Morton International/CVD Inc., Woburn, MA 01810
Michael A. Pickering
Affiliation:
Morton International/CVD Inc., Woburn, MA 01810
Raymond L. Taylor
Affiliation:
Morton International/CVD Inc., Woburn, MA 01810
Get access

Abstract

A novel replication process for silicon carbide surfaces has been developed. A polished polycrystalline chemical vapor deposited (CVD) β-SiC surface was reproduced from a SiC substrate (mandrel) by a two-step pretreatment process followed by CVD of SiC. In this paper we describe the process and present characterization data for both the substrate and the replicated surfaces. Based on the characterization results, we have developed a model which describes the chemical reactions that occur during the replication process.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Schlichting, J., Powd. Met. Int. 12, 145 (1980).Google Scholar
2.Saxena, Ram R. and Bragg, R.H., Carbon 16, 373 (1978).Google Scholar
3.Jenkins, G.M. and Kawamura, K., Polymeric Carbons-Carbon Fibre, Glass and Char (Cambridge University Press, Cambridge, England 1976).Google Scholar
4.Baranov, A.V., Bobovich, Va. S. and Petrov, V.I., Opt. Spectrosc. (USSR) 63(5), 606 (1987).Google Scholar
5.Collins, A. K., Keeley, J. T., Pickering, M.A., and Taylor, R.L., to be published.Google Scholar
6.Muehlhoff, L., Choyke, W.J., Bozack, M.J. and John Yates, T. Jr., J. Appl. Phys. 60(8), 2842 (1986).Google Scholar
7.Fung, C.D. and Kopanski, J.J., Appl. Phys. Lett. 45(7), 757 (1984).Google Scholar