Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T04:20:03.916Z Has data issue: false hasContentIssue false
  • English
  • Français

Intrinsic Defects in GaAs - the Case of El2

Published online by Cambridge University Press:  26 February 2011

H. J. Von Bardeleben  and
D. Stievemard
H. J. Von Bardeleben
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, C.N.R.S., Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
D. Stievemard
Affiliation:
Département de Physique des Solides, Institut Supérieur d'Électronique du Nord, 41 boulevard Vauban, 59046 Lille Cedex, France
Get access

Abstract

The arsenic antisite-arsenic interstitial pair model for the stable configuration of the EL2 defect in GaAs has stimulated new experimental and theoretical studies, the results of which lead to additional support for this model. Recent theoretical studies, taking into account the effect of a Jahn Teller distortion of the T2 Asi levels have given an insight into the stability and the electronic structure of the defect pair. Further, ODENDOR studies have directly confirmed this model and allowed one to specify the lattice location and the charge state of the Asi ion. The pair structure of this defect implies a reconsideration of the charge states of the EL2 defect, as well as the origin of the optical absorption bands for which transitions on the Asi ion and intracenter bands have also to be considered. The model leads further to a description of the metastable configuration : an arsenic molecule at the gallium vacancy site, the electronic structure of which is calculated. The vacancy related defects, known from electron irradiation studies, are not detected in LEC grown GaAs as native defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 351
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Elliot, K., Chen, R.T., Greenbaum, S.G. and Wagner, R.J., Appl. Phys. Lett. 44, 907 (1984).Google Scholar
2.Bois, D. and Vincent, G., J. Phys. (F) 38, L 351 (1977).Google Scholar
3.Lin, A.L., Omelanovskii, E. and Bube, R.H., J. Appl. Phys. 47, 1852 (1976).Google Scholar
4.Wan, K. and Bray, R., Phys. Rev. B, 32, 5269 (1985).Google Scholar
5.von Bardeleben, H.J., Bourgoin, J.C., Zelsmann, H.R. and Bonnet, M., presented at the European MRS Meeting, Strasbourg, 1987 (to be published).Google Scholar
6.Martin, G.M., Appl. Phys. Lett. 39, 747 (1981).Google Scholar
7.Recent Developments in the Study of the EL2 Defect in GaAs, edited by von Bardeleben, H.J. and Pajot, B., special edition (Rev. Phys. Appliquée, Paris, 1987) (to be published).Google Scholar
8.Pons, D. and Bourgoin, J.C., J. Phys. C: Solid State Phys. 18, 3839 (1985).Google Scholar
9.Bourgoin, J.C., von Bardeleben, H.J. and Stiévenard, D., Phys. Stat. Sol. (a) 102, 499 (1987).Google Scholar
10.von Bardeleben, H.J., Bourgoin, J.C. and Miret, A., Phys. Rev. B, 34, 1360 (1986).Google Scholar
11.Dannefaer, S. and Kerr, D., J. Appl. Phys. 60, 591 (1986).Google Scholar
12.Stucky, M., Corbel, C., Geffroy, B., Moser, P. and Hautojärvi, P., in Defects in Semiconductors, edited by Bardeleben, H.J. von (Mat. Science Forum 10–12, Aedermannsdorf, Switzerland, 1986) p. 265.Google Scholar
13.Lim, H.J., von Bardeleben, H.J. and Bourgoin, J.C., J. Appl. Phys. 62, 2738 (1987).Google Scholar
14.von Bardeleben, H.J., Miret, A., Lim, H.J. and Bourgoin, J.C., J. Phys. C: Solid State Phys. 20, 1353 (1987).Google Scholar
15.Thompson, F., Morrison, S.R. and Newman, R.C., in Radiation Damage and Defects in Semiconductors, edited by Whitehouse, J.E. (Inst. of Phys., London, 1972) p. 371.Google Scholar
16.Brozel, M.R. and Newman, R.C., J. Phys. C: Solid State Phys. 11, 35 (1978).Google Scholar
17. D. Stiévenard, Boddaert, X. and Bourgoin, J.C., Phys. Rev. B, 34, 4048 (1986).Google Scholar
18.Lannoo, M. (to be published).Google Scholar
19.Goswami, N.K., Newman, R.C. and Whitehouse, J.F., Solid State Comm. 40, 473 (1981).Google Scholar
20.Wagner, R.J., Krebs, J.J., Stauss, G.H. and White, A.M., Solid State Comm. 36, 15 (1980).Google Scholar
21.von Bardeleben, H.J., Stiévenard, D., Deresmes, D., Huber, A. and Bourgoin, J.C., Phys. Rev. B, 34, 7192 (1986).Google Scholar
22.Elliot, K.R., Holmes, D.E., Chen, R.T. and Kirkpatrick, C.G., Appl. Phys. Lett. 40, 898 (1982).Google Scholar
23.Moore, W.J., Hawkins, R.L. and Shanabrook, B.V., Physica 146B, 65 (1987).Google Scholar
24.Martin, G.M. and Madram-Ebeid, S., in Deep Centers in Semiconductors, edited by Pantelides, S. (Gordon & Breach, Sc. Publ., New York, 1986) p. 399.Google Scholar
25.Weber, E.R. and Schneider, J., Physica 116B, 398 (1983).Google Scholar
26.Lin-Chung, P.J. and Reinecke, T.L., Phys. Rev. B, 27, 1101 (1982).Google Scholar
27.Bachelet, G.B. and Scheffler, M., Proc. of the 17th Int. Conf. Physics on Semiconductors (Springer, New York, 1985) p. 755.Google Scholar
28.Makram-Ebeid, S., Gautard, D., Devillard, P. and Martin, G.M., Appl. Phys. Lett. 40, 160 (1982).Google Scholar
29.Spaeth, J.M., Hofmann, D.M. and Meyer, B. in Mat. Res. Soc. Symp. Proc. 46, 185 (1985).Google Scholar
30.von Bardeleben, H.J., Stiévenard, D., Bourgoin, J.C. and Huber, A., Appl. Phys. Lett. 47, 970 (1985).Google Scholar
31.Ludwig, G.W., Phys. Rev. 137, A 1520 (1965).Google Scholar
32.Wärner, R. and Schirmer, O.F., Sol. State Commun. 51, 665 (1984).Google Scholar
33.Meyer, B.K., Hofmann, D.M. and Spaeth, J.M. in Defects in Semiconductors, edited by von Bardeleben, H.J. (Material Science Forum, 10–12, Aedermannsdorf, Switzerland 1986) p. 311.Google Scholar
34.Meyer, B.K in Recent Developments in the Study of the EL2 Defect in GaAs, edited by von Bardeleben, H.J. and Pajot, B. (Revue Phys. Appliquée, Paris, 1987) (to be published).Google Scholar
35.Levinson, M. and Kafalas, J.A., Phys. Rev. B 35, 9383 (1987).Google Scholar
36.Manasreh, M.O. and Covington, B.C., Phys. Rev. B 35, 2524 (1987).Google Scholar
37.Baraff, G.A. and SchlUter, M., Phys. Rev. B, 35, 5929 (1987).Google Scholar
38.Baraff, G.A., Lannoo, M. and SchlUter, M. (to be published).Google Scholar
39.Kaminska, M., Skowronski, M. and Kuszko, W., Phys. Rev. Lett. 55, 2204 (1985).Google Scholar
40.Figielski, T. and Wosinski, T., Phys. Rev. B, 36, 1269 (1987).Google Scholar
41.Skowronski, M., Lin, D.G., Lagowski, J., Pawlowicz, L.M., Ko, K.Y. and Gatos, H.C. in Microscopic Identif. of Elec. Def. in Semiconductors, edited by Johnson, N.M., Bishop, S.G. and Watkins, G.D. (Material Research Society, Pittsburgh, USA, 1985) p. 207.Google Scholar
42.Lagowski, J. and Gatos, H.C. in Defects in Semiconductors, edited by Kimerling, L.C. and Parsey, J.M. (The Metall. Soc. of AIME, 1985) p. 73.Google Scholar
43.Baraff, G.A. and Schliter, M., Phys. Rev. Lett. 55, 2340 (1985).Google Scholar
44.Wager, J.F. and van Vechten, J.A., Phys. Rev. B, 35, 2330 (1987).Google Scholar
45.Ikoma, T. and Mochizuki, Y., Japan J. Appl. Phys. 24, L935 (1985).Google Scholar
46.Vincent, G. and Bois, D., Solid State Comm. 27, 431 (1978).Google Scholar
47.Mittoneau, A. and Mircea, A., Solid State Comm. 30, 157 (1979).Google Scholar
48.Nojima, S., J. Appl. Phys. 57, 620 (1985).Google Scholar
49.Mochizuki, Y. and Ikoma, T., Japan J. Appl. Phys. 24, L 895 (1985).Google Scholar
50.Parker, J.C. and Bray, R. in Defects in Semiconductors, edited by von Bardeleben, H.J. (Material Science Forum 10–12, Aedermannsdorf, Switzerland, 1986) p. 347.Google Scholar
51.Fischer, D.W., Appl. Phys. Lett. 50, 1751 (1987).Google Scholar
52.von Bardeleben, H.J., Bagraev, N.T. and Bourgoin, J.C., Appl. Phys. Lett. 51, 1451 (1987).Google Scholar
53.Vincent, G., Bois, D. and Chantre, A., J. Appl. Phys. 53, 3643 (1982).Google Scholar
54.Kaminska, M., Skowronski, M., Lagowski, J., Parsey, J.M. and Gatos, H.C., Appl. Phys. Lett. 43, 302 (1983).Google Scholar
55.von Bardeleben, H.J., Bourgoin, J.C., Stigvenard, D. and M. Lannoo in 14th Int. Symp. on GaAs and Rel. Compounds (to be published).Google Scholar
56.Fuchs, F. and Dischler, B., Appl. Phys. Lett. 51, 679 (1987).Google Scholar
57.Delerue, C., Stigvenard, D., Lannoo, M., von Bardeleben, H.J. and Bourgoin, J.C. (to be published).Google Scholar