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Interface Properties of II-VI/III-V Heterostructures

Published online by Cambridge University Press:  25 February 2011

R.L. Gunshor ,
M. Kobayashi  and
N. Otsuka
R.L. Gunshor
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
M. Kobayashi
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907
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Abstract

In situ x-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at CdTe/InSb and ZnSe/GaAs interfaces grown by molecular beam epitaxy. A comparison of the In3d core level features from the InSb epilayer surface, a Tereacted InSb surface, very thin (a few monolayers) CdTe/InSb epilayer/epilayer heterostructures and from separately grown (In,Te) epilayers, indicate similar In bonding characteristics for the Te-reacted layer, the CdTe/InSb heterostructures and the (In,Te) epilayers. A parallel XPS study of ZnSe/GaAs interfaces leads to the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming IIVI/ III-V junctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 303
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1) Gunshor, R.L., Kolodziejski, L.A., Melloch, M.R., Vaziri, M., Choi, C., and Otsuka, N., Appl. Phys. Lett. 50 200 (1987).CrossRefGoogle Scholar
[2] Studtmann, G.D., Gunshor, R.L., Kolodziejski, L.A., Melloch, M.R., Cooper, J.A. Jr, Pierret, R.F., Munich, D.P., Choi, C., and Otsuka, N., Appl. Phys. Lett. 52 1249 (1988).CrossRefGoogle Scholar
(3) Tamargo, T.C., Miguel, J.L. de, Hwang, D.M., and Farrell, H.H., J. Vac. Sci. Technol. B6 784 (1988).CrossRefGoogle Scholar
[4] Suemune, I., Ohmi, K., Kanda, T., Yukutake, K., Kan, Y., and Yamanishi, M., Jpn J. Appl. Phys. 25 L827 (1986).CrossRefGoogle Scholar
[5] Kobayashi, N., Jpn J. Appl. Phys. 27 L1597 (1988).CrossRefGoogle Scholar
[6] Qian, Q.-D., Qiu, J., Melloch, M.R., Cooper, J.A. Jr, Kolodziejski, L.A., Kobayashi, M., and Gunshor, R.L., Appl. Phys. Lett. 54 1359 (1989).CrossRefGoogle Scholar
(7] Qian, Q.-D., Qiu, J., Kobayashi, M., Gunshor, R.L., Melloch, M.R.,and Cooper, J.A. Jr, J. Vac. Sci. Technol. B7 793 (1989).CrossRefGoogle Scholar
[8] Wu, Y.-H., Kawakami, Y., Fujita, S., and Fujita, S., Jpn. J. Appl. Phys. 29 L144 (1991).CrossRefGoogle Scholar
[9] Mackey, K.J., Zahn, D.R.T., Allen, P.M.G., Williams, R.H., Richter, W., and Williams, R.S., J Vac. Sci. Technol. D5 1233 (1987).CrossRefGoogle Scholar
[10] Golding, T.D., Martinka, M., and Dinan, J.H., J. Appl. Phys. 64 1873 (1988).CrossRefGoogle Scholar
[11] Williams, G.M., Cullis, A.G., Barnett, S.J., Whitehouse, C.R., Golding, T.D., and Dinan, J.H., J. Vac. Sci. Technol. A9(1) 71 (1991).CrossRefGoogle Scholar
[12] Golding, T.D., Green, S.K., Pepper, M., Dinan, J.H., Cullis, A.G., Williams, G.M. and Whitehouse, C.R., Semiconductor Science Technology 5 S311 (1990).CrossRefGoogle Scholar
[13] Qiu, J., Qian, Q.-D., Gunshor, R.L., Kobayashi, M., Menke, D.R., Li, D., and Otsuka, N., Appl. Phys. Lett. 56 1272 (1990).CrossRefGoogle Scholar
[14] Li, D., Gonsalves, J.M., Otsuka, N., Qiu, J., Kobayashi, M., and Gunshor, R.L., Appl. Phys. Lett. 57 449 (1990).CrossRefGoogle Scholar
[15] Qiu, J., Menke, D.R., Kobayashi, M., Gunshor, R.L., Li, D., Nakamura, Y., and Otsuka, N., to appear in Appl. Phys. Lett. (1991).Google Scholar
[16] Raether, H., “Excitation of plasmons and Interband Transitions by Electrons”, Springer Tracts in Modern Physics, 88, 53 (1980).Google Scholar
[17] Lubbers, F.D. and Leute, V., J. Solid State Chem., 43 339 (1982).CrossRefGoogle Scholar
[18] Menke, D.R., Qiu, J., Gunshor, R.L., Kobayashi, M., Li, D., Nakamura, Y., and Otsuka, N., to appear in J. Vac. Sci. Technol. B9 (1991).Google Scholar
[19] Li, D., Otsuka, N., Qiu, J., Glenn, J. Jr, Kobayashi, M., and Gunshor, R.L., Mat. Res. Soc. Symp. Proc., 6J, 127 (1990).Google Scholar
[20] Glenn, J.L. Jr, Sungki, O, Kolodziejski, L.A., Gunshor, R.L., Kobayashi, M., Li, D., Otsuka, N., Haggerott, M., Pelekanos, N., and Nurmikko, A.V., J. Vac. Sci. Technol. B–7 249 (1986).Google Scholar