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Interaction Between EL5 and EL6 in Bulk GaAs

Published online by Cambridge University Press:  26 February 2011

Hiroyuki Shiraki ,
Yutaka Tokuda  and
Koichi Sassa
Hiroyuki Shiraki
Affiliation:
Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro-cho, Omiya, Saitama, Japan
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, 1247 Yachigusa Yakusa, Toyota, Aichi, Japan
Koichi Sassa
Affiliation:
Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro-cho, Omiya, Saitama, Japan
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Abstract

The interaction between EL5 and EL6 in the n-type bulk GaAs have been observed by using isothermal constant-capacitance voltage transient spectroscopy (CCVTS). Each CCVTS spectrum of EL5 and EL6 was broader than a theoretical one expected for a single level, and was found to be consistently interpreted by two main trap components. With the increase of the filling pulse duration in a wide range, one component of EL6 decreased to about 50 % of its initial value, while one component of EL5 increased and saturated. This variation in peak heights could be reversed by controlling electron occupation fractions of EL5 and EL6 by application of two adjacent filling pulses. Such interaction between both levels was commonly observed in n-type bulk GaAs independent of carrier density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 935
Copyright
Copyright © Materials Research Society 1995

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References

1. Kitagawara, Y., Noto, N., Takahashi, T., and Takenaka, T., Appl. Phys. Lett., 48, 1664 (1986).Google Scholar
2. Fang, Z. Q., Schlesinger, T. E., and Milnes, A. G., J. Appl. Phys., 61, 5047 (1987).Google Scholar
3. Zhao, J. H., Schlesinger, T. E., and Milnes, A. G., J. Appl. Phys., 62, 2865 (1987).Google Scholar
4. Siegel, W., Kuhnel, G., Schnider, H. A., Witte, H., and Flade, T., J. Appl. Phys., 69, 2245 (1987).Google Scholar
5. Shiraki, H., Tokuda, Y., and Sassa, K., in Defect Engineering in Semiconductor Growth, Processing and Device Technology, edited by Ashok, S., Chevallier, J., Sumino, K., and Weber, E. (Mater. Res. Soc. Proc. 262, Pittsburgh, PA, 1992) p. 105.Google Scholar
6. Tomizawa, K., Sassa, K., Shimanuki, Y., and Nishizawa, J., Inst. Phys. Conf. Ser., 91, p.435 (1987) (Int. Symp. GaAs and Related Compound, Heraklion, Greece).Google Scholar
7. Atami, T., Shirata, K., Takahashi, H., Sassa, K., and Tomizawa, K., Inst. Phys. Conf. Ser., 129, p.25 (1992) (Int. Symp. GaAs and Related Compound, Karuizawa, Japan).Google Scholar
8. Tokuda, Y., Shimizu, N., and Usami, A., Jpn. J. Appl. Phys., 18, 309 (1979).Google Scholar
9. Tokuda, Y., Hayashi, M., and Usami, A., J. Phys.D, 14, 895 (1981).Google Scholar
10. Su, Z., and Farmer, J. W., Appl. Phys. Lett., 59, 1362 (1991).Google Scholar
11. Su, Z., and Farmer, J. W., Appl. Phys. Lett., 59, 1746 (1991).Google Scholar
12. Su, Z., and Farmer, J. W., Mater. Sci. Forum, 83–87, 817 (1992).Google Scholar