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In-Situ Dry Etching of InP Using Phosphorus Tri-Chloride and Re-Growth Inside a Chemical Beam Epitaxial Growth Chamber

Published online by Cambridge University Press:  22 February 2011

K M. Kapre ,
W. T. Tsang  and
P. F. Sciortino Jr
K M. Kapre
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. T. Tsang
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
P. F. Sciortino Jr
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We have extended the capability and versatility of a chemical beam epitaxial (CBE) system by demonstrating reactive chemical beam etching (RCBE) of InP using phosphorus tri chloride (PCl3)as the gaseous etching beam injected directly into the growth chamber. This permits instant switching from etching to growth (and vice versa) in the same run for the first time in CBE. We investigated RCBE of InP at various substrate temperatures between 400 °C and 580°C, under different PCl3 fluences, and etching conditions. Excellent surface morphology was obtained at high temperatures (> 530°C - 570°C) and under an etching rate of < 6 Å/sec. We also found that upon addition of trimethylindium flow equivalent to a growth rate of 1 Å/sec during RCBE a dramatic improvement in surface morphology was obtained even at a high net etching rate of 10 Å/sec. The surface morphology obtained under such conditions is indistinguishable from that of the original substrate surface. Using Si02 as a mask, in-situ etching of laser mesas followed immediately by regrowth of blocking layers with excellent wetting characteristics was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 203
Copyright
Copyright © Materials Research Society 1993

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References

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