Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T02:17:22.897Z Has data issue: false hasContentIssue false

In-homogeneous precipitation of Iron from SC1 Solutions

Published online by Cambridge University Press:  10 February 2011

D. Martin Knotter
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Assigned to IMEC from Philips Research, Prof Holstlaan 4 (WAGO 1), 5656AA Eindhoven, the Netherlands, [email protected]
Stefan de Gendt
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Paul Mertens
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Marc M. Heyns
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Get access

Abstract

It is found that Fe in a ppb level Fe-spiked SC1 solution precipitates in-homogenous. The local high iron concentrations are difficult to rinse, create micro-roughness, and induce weak spots in capacitors. With AFM it has been shown that rings of 3–8 μm are etched in the silicon and that the etch products (silicates) are deposited on one side just outside the ring. The capacitor yield loss induced by this SC1 treatment can not be recovered fully by a subsequent SC2 or dHCL step, while a dHF/dHCl does fully recover the yield and removes the iron and silicate rim.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hurd, T. Q., Mertens, P. W., Schmidt, H. F., Ditter, D., Hall, L. H., Meuris, M. and Heyns, M. M in IES 40th Annual Technical Meeting Proceedings vol.1 (IES, Mount Prospect, Illinois, 1994) p. 218.Google Scholar
2. Schmidt, H. F., Meuris, M., Mertens, P. W., Rontondaro, A. L. P., Heyns, M. M., Hurd, T. Q. and Hatcher, Z., Jpn. J. Appl. Phys. 34, pp. 727–31 (1995).CrossRefGoogle Scholar
3. Mouche, L., Beneyton, B., Paillet, C., Joly, J. P., Tardif, F., Levy, D., Barla, K., Patruno, P., Tonti, A. and Sievert, W. in Proceedings of the 2th Int. Symp. on Ultra-clean Processing on Silicon Surfaces, edited by Heyns, M., Meuris, M. and Mertens, P. (ACCO, Leuven, Belgium), p. 19–22.Google Scholar
4. van den Meerakker, J. E. A. M. and van der Straaten, M. H. M., J. Electrochem. Soc. 137, pp. 1239–43 (1990).CrossRefGoogle Scholar