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The Influence of Stressing at Different Biases on the Electrical and Optical Properties of CdS/CdTe Solar Cells

Published online by Cambridge University Press:  21 March 2011

S. W. Townsend ,
T. R. Ohno ,
V. Kaydanov ,
A. S. Gilmore ,
J. D. Beach  and
R. T. Collins
S. W. Townsend
Affiliation:
Colorado School of Mines, Dept of Physics 1523 Illinois St. Golden, CO 80401, U.S.A.
T. R. Ohno
Affiliation:
Colorado School of Mines, Dept of Physics 1523 Illinois St. Golden, CO 80401, U.S.A.
V. Kaydanov
Affiliation:
Colorado School of Mines, Dept of Physics 1523 Illinois St. Golden, CO 80401, U.S.A.
A. S. Gilmore
Affiliation:
Colorado School of Mines, Dept of Physics 1523 Illinois St. Golden, CO 80401, U.S.A.
J. D. Beach
Affiliation:
Colorado School of Mines, Dept of Physics 1523 Illinois St. Golden, CO 80401, U.S.A.
R. T. Collins
Affiliation:
Colorado School of Mines, Dept of Physics 1523 Illinois St. Golden, CO 80401, U.S.A.
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Abstract

Cadmium Sulfide/Cadmium Telluride (CdS/CdTe) devices are subject to stress under various biases. Striking differences are observed with the Current-Voltage, and Capacitance- Voltage measurements for cells degraded at 100°C in dark under forward (FB), open circuit (OC), and reverse (RB) biases. RB stress provides the greatest degradation, and the apparent doping density profile shows anomalous behavior at the zero bias depletion width. Thin films of CdS, both doped and undoped, with Cu are characterized with photoluminescence (PL). The PL spectra from the CdS films are correlated with the CdS spectra from stressed devices, revealing that Cu signatures in the CdS layer of stressed devices are a function of stress biasing. Device modeling using AMPS-1D produces IV curves similar to that in RB degraded devices, by only varying the trap level concentration in the CdS layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H5.11
Copyright
Copyright © Materials Research Society 2001

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References

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