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Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Junctions
Published online by Cambridge University Press: 21 March 2011
Abstract
We have been able to deduce a temperature dependence of the built-in potential in La2/3Sr1/3MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1μm width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.
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- Copyright © Materials Research Society 2001
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