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Influence of Deposition Conditions on the 1/f Noise in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

P. W. West ,
D. Quicker ,
H. M. Dyalsingh  and
J. Kakalios
P. W. West
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
D. Quicker
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
H. M. Dyalsingh
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
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Abstract

The electronic properties of a series of n-type doped hydrogenated amorphous silicon (a-Si:H) films grown with deposition rates ranging from 2 Å/s to 33 Å/s have been studied. Infrared absorption spectroscopy shows an increase in S1-H2 content with deposition rate, concurrent with a decreasing conductivity, increasing thermal equilibration relaxation time, and increasing disorder at the mobility edge as measured by the difference in thermopower and dark conductivity activation energies. The current 1/f noise properties become highly nonstationary, with increased variability and inapplicability of statistical analysis as the deposition rate increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 215
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Parman, C.E, Israeloff, N.E. and Kakalios, J., Phys. Rev. B 47 (19), 12578 (1993).Google Scholar
2. Khera, G. M. and Kakalios, J., to be published.Google Scholar
3. Fan, J. and Kakalios, J., Phil. Mag. B 69 (4), 595 (1994).Google Scholar
4. Dyalsingh, H. M., Khera, G. M., and Kakalios, J., in Amorphous Silicon Technology- 1995, edited by Hack, M., Schiff, E. A., Madan, A., Powell, M. and Matsuda, A. (Mater. Res. Soc. Proc. 377, Pittsburgh, PA, 1986) pp. 577–582.Google Scholar
5. Lust, L.M. and Kakalios, J., in Amorphous Silicon Technology-1995, edited by Hack, M., Schiff, E. A., Madan, A., Powell, M. and Matsuda, A. (Mater. Res. Soc. Proc. 377, Pittsburgh, PA, 1986) pp. 401–406.Google Scholar
6. Khera, G.M. and Kakalios, J., in Amorphous Silicon Technology-1994, edited by Schiff, E.A., Hack, M., Madan, A., Powell, M. and Matsuda, A. (Mater. Res. Soc. Proc. 336, Pittsburgh, PA, 1986) pp. 395–400.Google Scholar
7. Restie, J., Weissman, M.B. and Black, R.D., J. Appl. Phys. 54, 5844 (1983);Google Scholar
Restie, P.J. et al, Phys. Rev. B 31, 2254 (1985).Google Scholar
8. Beyer, W. and Overhof, H., Solid State Comm. 31, 1 (1979).Google Scholar
9. Dyalsingh, H. M. and Kakalios, J., Phys. Rev. B 54, 7630 (1996).Google Scholar
10. Bhattacharya, E. and Mahan, A.H., Appl. Phys. Lett. 52, 1598 (1988).Google Scholar
11. Menna, P. and Mahan, A.H., 19th IEEE Photovoltaic Specialists Conf. 832 (1987).Google Scholar
12. Kakalios, J., Street, R. A., and Jackson, W. B., Phys. Rev. Lett. 59, 1037 (1987).Google Scholar